Non-volatile electric control of magnetic and topological properties of MnBi₂Te₄ thin films ^*

In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: uses heterostructure TQM with two-dimensional (2D) ferroelectric material, which can dynamically order changing polarization and induce possible phase transitions. This concept is demonstrated example bilayer MnBi2Te4 on In2Se3 or In2Te3, where direction 2D ferroelectrics determines interfacial band alignment consequently charge transfer. transfer, in turn, enhances stability ferromagnetic state leads transition between anomalous Hall (QAH) effect zero plateau QAH. Our work provides route alter ordering TQMs could lead discovery new multifunctional heterostructures.